? 2010 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c 200 v v dgr t j = 25 c to 175 c, r gs = 1m 200 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c60 a i dm t c = 25 c, pulse width limited by t jm 150 a i a t c = 25 c30 a e as t c = 25 c 700 mj p d t c = 25 c 500 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6mm (0.062in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-220 &to-3p) 1.13 / 10 nm/lb.in. weight to-263 2.5 g to-220 3.0 g to-3p 5.5 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 200 v v gs(th) v ds = v gs , i d = 250 a 3.0 5.0 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 1 a t j = 150 c 250 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 32 40 m trench tm power mosfet n-channel enhancement mode for pdp drivers avalanche rated ixta60 n20t ixtp60 n20t ixtq60 n20t v dss = 200v i d25 = 60a r ds(on) 40m ds99359b(7/10) features z high current handling capability z 175c operating temperature z avalanche rated z fast intrinsic rectifier z low r ds(on) advantages z easy to mount z space savings z high power density applications z dc-dc converters z battery chargers z switch-mode and resonant-mode power supplies z dc choppers z ac motor drives z uninterruptible power supplies z high speed power switching applications g d s to-220ab (ixtp) d (tab) g = gate d = drain s = source tab = drain to-3p (ixtq) d g s d (tab) to-263 aa (ixta) g s d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. IXTA60N20T ixtp60n20t ixtq60n20t note 1. pulse test, t 300 s, duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 to-263 (ixta) outline 1. gate 2. collector 3. emitter 4. collector bottom side dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.40 0.74 .016 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 8.00 8.89 .280 .320 e 9.65 10.41 .380 .405 e1 6.22 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.13 0 .005 to-3p (ixtq) outline pins: 1 - gate 2 - drain 3 - source to-220 (ixtp) outline symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 40 62 s c iss 4530 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 490 pf c rss 72 pf t d(on) 22 ns t r 13 ns t d(off) 33 ns t f 22 ns q g(on) 73 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 22 nc q gd 22 nc r thjc 0.30 c/w r thcs to-220 0.50 c/w r thcs to-3p 0.25 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 60 a i sm repetitive, pulse width limited by t jm 240 a v sd i f = 60a, v gs = 0v, note 1 1.3 v t rr 118 ns i rm 9.3 a q rm 550 nc resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 10 (external) i f = 0.5 ? i d25 , v gs = 0v -di/dt = 100a/ s v r = 85v
? 2010 ixys corporation, all rights reserved IXTA60N20T ixtp60n20t ixtq60n20t fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 v ds - volts i d - amperes v gs = 15v 10v 8v 7v 5v 6v fig. 2. extended output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10 12 14 16 18 20 v ds - volts i d - amperes v gs = 15v 10v 7v 5v 6v 8v fig. 3. output characteristics @ t j = 150oc 0 10 20 30 40 50 60 0.00.51.01.52.02.53.03.54.04.55.0 v ds - volts i d - amperes v gs = 15v 10v 7v 6v 5v 4v fig. 4. r ds(on) normalized to i d = 30a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 60a i d = 30a fig. 5. r ds(on) normalized to i d = 30a value vs. drain current 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 20 40 60 80 100 120 140 160 180 200 i d - amperes r ds(on) - normalized v gs = 10v t j = 175oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 10 20 30 40 50 60 70 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXTA60N20T ixtp60n20t ixtq60n20t fig. 7. input admittance 0 20 40 60 80 100 120 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 v gs - volts i d - amperes t j = 150oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 120 0 20 40 60 80 100 120 140 i d - amperes g f s - siemens t j = - 40oc 150oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 20 40 60 80 100 120 140 160 180 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 10203040506070 q g - nanocoulombs v gs - volts v ds = 100v i d = 30a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - oc / w ixys ref: t_60n20t(5g)02-10-10
|
